DECEMBER 202519APACAPACGiven the latter, at lower voltages, though, power MOSFETs can become more suitable and have lower conduction losses. Moreover, due to slower ON and OFF times compared to the MOSFET, for high-frequency applications beyond the tens of kHz, the IGBTs might be inadequate, and the MOSFET, able to reach hundreds of kHz, could be preferred again for lower switching losses.Today’s and Future ScenariosToday, energy-application large-scale power electronics manufacturers like Power Electronics, SMA, Ingteam, ABB and others have their current products based on IGBT devices with applications targeting renewable energy technologies like solar generation, battery storage and hydrogen production. This has caused a number of IGBT shortages in the market and a general increase in pricing. Nevertheless, the market is expected to grow by 8-10% over the next 10 years projecting to more than double its current value. The growth is linked to a number of new applications, with the diffusion of EVs and the electrification revolution being two significant contributors. On the competition side, IGBTs are challenged by the rise of Silicon Carbide (SiC) MOSFET, which is available in the market. SiC MOSFETs have a higher voltage range than conventional MOSFETs and ensure better performance over IGBTs in some applications despite their higher cost. Michele (Mike) Giulianini
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